摘要
采用溶胶-凝胶(Sol-Gel)法直接在p-Si衬底上制备生长Bi4Ti3O12铁电薄膜,研究了Ag/Bi4Ti3O12/p-Si异质结电滞回线的特征及Bi4Ti3O12薄膜的铁电性能。空间电荷层的存在使Si基Bi4Ti3O12铁电薄膜呈不对称的电滞回线并导致薄膜的极化减弱。退火温度同时影响了薄膜的晶粒尺寸和薄膜中的载流子浓度,而这两种因素对铁电性能的影响是相反的。Bi4Ti3O12薄膜的铁电性能随退火温度的变化是两种因素共同作用的结果。
Polycrystalline Bi_4Ti_3O_(12) thin films were successfully produced on p-Si by Sol-Gel technique. The characters of hysteresis loops and ferroelectric properties of the Ag/ Bi_4Ti_3O_(12)/p-Si heterostructure were studied. The asymmetry in hysteresis loops, lower remanent polarization and higher coercive field were due to the existence of space charge layers. The annealing temperature affected the size of grain and consistence of charge carrier. The ferroelectric properties of the Bi_4Ti_3O_(12) thin films varied with the annealing temperature, which was affected by these facts jointly.
出处
《压电与声光》
CSCD
北大核心
2003年第6期501-504,共4页
Piezoelectrics & Acoustooptics
基金
广西自治区自然科学基金资助项目(桂科基0236062)
关键词
铁电薄膜
BI4TI3O12
电滞回线
铁电性能
ferroelectric thin films
Bi_4Ti_3O_(12)
hysteresis loops
ferroelectric properties
