摘要
文章尝试了采用真空二流体蚀刻试做35μm/35μm线路的可行性。经过实验证明:采用DES工艺&搭配合适的蚀刻设备,如真空二流体蚀刻机,可以把细线路制作等级提升到35μm/35μm;能获得大于3的蚀刻因子,局部区域的蚀刻因子更是高达14.99-11.82。此外,3μm铜箔可以获得集中度更高的线宽&更高的蚀刻因子。
This paper makes a feasibility study into 35μm/35μm fine line using vacuum and two fluid etching equipment. Through the test we get the following result: 35μm/35μm fine line can be realized by adopting DES process going with vacuum and two fluid etching. Etch factor is greater than 3 and parts of that is up to 11.83~14.99. Beside, using ultra thin copper of 3μm we can get better result: ever higher degree of concentration line width and ever bigger etching factor.
出处
《印制电路信息》
2015年第3期35-39,共5页
Printed Circuit Information
关键词
细线路
真空二流体蚀刻
Fine Line
Vacuum& Two Fluid Etching
