摘要
本文介绍了利用半导体硅材料制作的真空微电子器件的核心部件,场致发射硅锥阴极,的工艺研究及实验结果。提出了两步腐蚀的工艺方案,制成了形状理想的锥体阴极。
A process for the fabrication of Si cone cathode for the build up of vacuum microelectronic devices is proposed and its experimental results are given. Ideally shaped cone cathodes have been successfully formed by using a two-step etching method.
出处
《微电子学》
CAS
CSCD
1992年第4期70-73,共4页
Microelectronics
关键词
硅锥阴极
微电子器件
工艺
设计
Si cone cathode, Vacuum microelectronic device. Process design
