摘要
本文详细分析了影响制备高质量超薄SiO_2介质的主要因素,找到了制备超薄SiO_2介质的较佳工艺,即中间退火氩气稀释氯化氢氧化法,用该方法制备的100～120(?)超薄SiO_2介质平均击穿强度达12MV/cm.
The main factors affecting high qualityultrathin SiO_2 dielectrics in preparation are ana-lysed in detail in this paper,A better processespreparring ultrathin SiO_2 dielectrics are offered,which is a HCI oxidation method with Ar dilu-tion and an intermediate annealing.The ultrathinSiO_2 dielectrics with 100～120(?) thickness perparedby this method exhibits average breakdown fieldof 12MV/cm.
出处
《微电子学与计算机》
CSCD
北大核心
1991年第8期44-46,共3页
Microelectronics & Computer
