摘要
纳米半导体量子点以其所具有的新颖光电性质与输运特性正在受到人们普遍重视。作为制备高质量纳米量子点的工艺技术 ,自组织生长方法倍受材料物理学家的青睐。而如何制备尺寸大小与密度分布可控的纳米量子点更为人们所注目。因为这是关系到纳米量子点最终能否器件实用化的关键。文中以此为主线 ,着重介绍了各种 Si表面 ,如常规表面、氧化表面、台阶表面以及吸附表面上 ,不同纳米量子点的自组织生长及其形成机理 。
Nanometer sized silicon structures have attracted much attention because of the ir unique photoelectronic and transport properties associated with quantum effec ts. Self assembled growth methods are of increasing interest as a formed techno lgoy of high quality nanoquantum dots. In particular, self assembled growth of nanoquantum dots with controlled size and density is very important for electron ic device applications. In the paper, we focused on the self assembled growth a nd formed mechanism on various Si surfaces, such as conventional surface, oxidiz ed surface, stepped surface and absorbed surface, and future development are als o discussed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2003年第3期349-355,共7页
Research & Progress of SSE
基金
河北省自然科学基金 (批准号 5 0 3 12 5和 5 0 0 0 84)资助项目
