摘要
随着柔性电子产品的迅速发展,具有优异铁电和压电性的Pb(Zr_(0.53)Ti_(0.47))O_3 (PZT)薄膜在柔性的非易失性存储器、传感器和制动器等器件中有广泛的应用前景.同时,由于外部环境越来越复杂,具有高温稳定特性的材料和器件受到越来越多的关注.本文在耐高温的二维层状氟晶云母衬底上,用脉冲激光沉积技术制备出外延的PZT薄膜,并通过机械剥离的方法,得到柔性的外延PZT薄膜.研究了Pt/PZT/SRO异质结的铁电和压电性及其高温特性,发现样品表现出优越的铁电性,剩余极化强度(P_r)高达65μC/cm^2,在弯曲104次后其铁电性基本保持不变,且样品在275℃高温时仍然保持良好的铁电性.本文为柔性PZT薄膜在航空航天器件中的应用提供了实验基础.
Recently,flexible electronic devices have attracted extensive attention due to their characteristics of flexibility,miniaturization and portability.Flexible functional oxide thin films with high performance and stability are the basis for high-performance flexible electronic devices.Perovskite lead zirconate titanate Pb(Zr0.53Ti0.47)O3(PZT)at'morphotropic phase boundary'indicates excellent ferroelectricity and piezoelectricity,and has broad prospects in flexible non-volatile memories,sensors and actuators.Moreover,high-temperature stable flexible memories and sensors have received increasing attention due to the escalating complexity of the external environment.In the present work,Pb(Zr0.53Ti0.47)03/SrRu03/BaTi03(PZT/SRO/BTO)heterostructures are prepared by pulsed laser deposition on high temperature resistant twodimensional layered fluorphlogopite mica substrates.Afterward,flexible epitaxial PZT thin films are obtained by mechanical stripping.The ferroelectricity,piezoelectricity and high temperature characteristics of PZT thin films are investigated.The thin films show superior ferroelectricity at room and high temperatures.At room temperature,the thin films exhibit excellent ferroelectricity with a remnant polarization(Pr)of^65μC/cm2.A saturation polarization(Ps)of^80μC/cm2 and a coercive field(Ec)of^100 kV/cm are also observed.In addition,after bending the thin films to a 1.5 cm radius 104 times,their ferroelectricity does not show deterioration at room temperature.In order to study the ferroelectricity of PZT thin films at high temperature,P-E loops from 27℃to 275℃are tested.The results show that the films still show excellent ferroelectricity with a Pr of^50μC/cm2 and a PS of^70μC/cm2 at 275℃.The present work provides a basis for the application of flexible epitaxial PZT thin film.Especially,the ferroelectricity of flexible PZT thin films at high temperature provides a possibility of obtaining high-temperature flexible electronic devices.
作者
李敏
时鑫娜
张泽霖
吉彦达
樊济宇
杨浩
Li Min;Shi Xin-Na;Zhang Ze-Lin;Ji Yan-Da;Fan Ji-Yu;Yang Hao(College of Science,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China)
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2019年第8期231-236,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:11774172
U1632122
51602152)
中央高校基本科研业务费专项基金(批准号:NE2016102
NP2017103)
南京航空航天大学研究生创新基地(实验室)开放基金(批准号:kfjj20170801)资助的课题~~
