摘要
本文对铝硅共晶生长过程进行了讨论,在此基础上对Jackson—Hunt公式进行了修正。在生长速度于10 m/s/～200m/s内变化时所提出的修正式同实验结果吻台得很好。对修正公式也进行了讨论。
In this paper the Al—Si eutectic growth process has been reviewed and a revision of rhe Jackson-Hunt formula is presented, The revised formula is in better agreement with the experimental results when the growth rate of the eutectic ranes from 10μm/s to 200μm/s, Also, some discussions are teken on the revised formula.
关键词
铝硅合金
共晶
生长
界面过冷
growth
eutectic
interface undercooling
eutectic flake spacing
aluminium-silicon alloys
