摘要
With the scaling development of the minimum lithographic size,the scaling trend of CMOS imager pixel size and fill factor has been computed according to the Moore rule.When the CMOS minimum lithographic feature scales down to 0.35 μm,the CCD image pixel size is not so easy to be reduced and but the CMOS image pixel size benefits from the scaling minimum lithographic feature. However, when the CMOS technology is downscaled to or under 0.35 μm,the fabrication of CMOS image sensors will be limited by the standard CMOS process in both ways of shallow trench isolation and source/drain junction,which results in pixel crosstalk.The impact of the crosstalk on the active pixel CMOS image sensor is analyzed based on the technology scaling.Some suppressed crosstalk methods have been reviewed.The best way is that combining the advantages of CMOS and SOI technology to fabricate the image sensors will reduce the pixel crosstalk.
With the scaling development of the minimum lithographic size,the scaling trend of CMOS imager pixel size and fill factor has been computed according to the Moore rule.When the CMOS minimum lithographic feature scales down to 0.35 μm,the CCD image pixel size is not so easy to be reduced and but the CMOS image pixel size benefits from the scaling minimum lithographic feature. However, when the CMOS technology is downscaled to or under 0.35 μm,the fabrication of CMOS image sensors will be limited by the standard CMOS process in both ways of shallow trench isolation and source/drain junction,which results in pixel crosstalk.The impact of the crosstalk on the active pixel CMOS image sensor is analyzed based on the technology scaling.Some suppressed crosstalk methods have been reviewed.The best way is that combining the advantages of CMOS and SOI technology to fabricate the image sensors will reduce the pixel crosstalk.
基金
"Hundred sPersonnageProjects"FoundationforChineseAcademyofSciences
