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VDMOS击穿电压与导通电阻的最佳设计 被引量:1

VDMOS Optimum Design of Breakdown Voltage and on—Resistance
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摘要 本文利用场限环理论和消除寄生晶体管效应等措施,提出了保证在原胞区击穿电压不降低的前提下,VDMOS导通电阻R_(on)及其结构参数的最佳设计方法。与以往的方法相比,具有使BV_(DS)容量和R_(on)值之间获得统筹考虑的优点。 In this paper a new design of an optimum structure parameter having the smallest VDMOS on-Resistance has been brought forward while the breakdown voltage in unit cell area does not descend. Design applies the field limiting ring theory and dispels the effect of parasitical transition Comparing with the traditional method, this design has a distinct merit which makes an unified plain with due consideration for both the BVos capacity and the Ron Value.
出处 《陕西机械学院学报》 1992年第1期27-33,69-70,共7页
关键词 设计 VDMOS 击穿电压 导通电位 VDMOS, Breakdown Voltage, on-Resistance
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