摘要
利用高能电子衍射振荡研究MBE异质材料生长工艺。优化了AlGaAs/InGaAs/GaAs材料生长工艺。通过霍耳测量、X射线双晶衍射及二次离子质谱研究了利用该工艺生长的AlGaAs/InGaAs/GaAs双δ掺杂PHEMT结构材料,获得了较好的材料参数。利用该材料研制器件也有较好的结果。
Using the RHEED to study the MBE heterostructure material growth technologies,the AlGaAs /InGaAs /GaAs material growth technologies are optimized.The AlGaAs /InGaAs /GaAs dou-bleδdoping PHEMT structure material is studied by Hall measurements,X rays double crystals diffraction and the second ion mass spectroscopy.Better material parameters are obtained.We al-so fabricated high quality PHEMT device with this material.The good properties of this material have been proved.
出处
《微纳电子技术》
CAS
2003年第10期20-26,共7页
Micronanoelectronic Technology
