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高灵敏GaAs探测器及应用 被引量:2

SENSITIVE GaAs DETECTORS AND APPLICATIONS
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摘要 在ICF实验研究中,我们应用新研制的经快中子辐照处理过的GaAs晶体材料做成的光导电探测器首次实验观察到各种结构的内爆靶发射的硬X光时间波形信号以及硬X光的空间角分布。这种探测器对X光有很高的灵敏度(约10^(-18)C/keV),有快的响应(约100ps),具有抗干扰能力强,灵敏度高体积小,用于ICF实验的X光诊断有独特优点。 In the ICF experiments, we have applied newly developed small GaAs - photoconductor detectors made with neutron -treated GaAs crystal material. Hard X -ray signals and hard X-ray angular distribution have been obtained with the detectors. The sensitivety to the X rays is about 10-18C/keV and the response about 100ps. The detectors have the ability against electromagnitic radiation inferfere in the target chamber.
出处 《强激光与粒子束》 EI CAS CSCD 1992年第4期575-580,共6页 High Power Laser and Particle Beams
关键词 硬X光 探测器 砷化镓 X射线诊断 hard X-ray, GaAs , implosion target, upperthermal electron.
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同被引文献17

  • 1杨洪琼,杨建伦,王慧芳.砷化镓探测器的镉上中子辐照改性[J].强激光与粒子束,1994,6(3):430-436. 被引量:3
  • 2郑永铭,王明达,卓志云,陆晓明,孙祚科,周兰.系列柱形薄壁腔靶制备工艺研究[J].强激光与粒子束,1994,6(4):573-580. 被引量:3
  • 3李三伟,祁兰英,易荣清,郑志坚,唐道源.激光聚变中硬X光能谱回推方法[J].强激光与粒子束,1995,7(2):205-210. 被引量:6
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  • 7Seghier Djelloul. Identification of deep defects in high-resistivity undoped LEC-GaAs irradiation with protons[J]. Journal of Physics D : Applied Physics, 1996,29(12) :3101-3105. 被引量:1
  • 8Shon Y,Kang T W, Kim T W. Deep levels in neutron-transmutation-doped and thermally annealed semi-insulating GaAs[J]. Applied Surface Science, 1998, 125(3-4) :321-324. 被引量:1
  • 9祁兰英,强激光与粒子束,1995年,5卷,2期,309页 被引量:1
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