摘要
报道了一种可用于并行光传输系统的64×64光探测器面阵。器件结构采用谐振腔增强型(RCE),吸收区由3层InGaAs/GaAs量子阱构成,谐振腔是由2组多层布拉格结构的反射镜组成,工作波长位于980nm。该器件利用倒装焊技术,将GaAs基的谐振腔增强型光探测器面阵与相应的Si基标准CMOS集成电路混合集成在一起,形成具备64×64路光并行接收及处理的大规模光电集成探测器面阵器件,并对光探测器面阵的主要特性进行了测试,测试结果显示该面阵具有均匀的电特性,反向偏压均大于14V,暗电流约为10nA数量级。
Character of a 64×64 photo-detector array which can be applied to parallel optic communication was presented. The detector is consist of a resonance and a absorber which made by three InGaAs/GaAs quantum well. And the resonance is made by two DBR. The detector operate at a wavelength of 980 nm. Flip chip bonding was used to assemble the device to a Si-based integrated circuits, which was applied to deal with the photocurrent generated by the detector and was fabricated by standard CMOS technology. Then a hybrid integrated 64 × 64 photo-detector array was formed and the electric character test result was desired. The device has fine electric character. The reverse voltage of each unit is above 14 V and the dark current of each unit is about 10 nA.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2003年第9期893-896,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学重大资助项目(969896260)
国家自然科学基金重点资助项目(69789802)
国家"863"高技术资助项目(2001AA312080
2002AA312240
2001AA122032)
关键词
倒装焊
光探测器面阵
谐振腔增强型
INGAAS/GAAS量子阱
Electric properties
Flip chip devices
Integrated circuits
Light transmission
Resonance
Semiconducting gallium arsenide
Semiconducting indium gallium arsenide
Semiconductor quantum wells
