摘要
通过干氧氧化的方法,在6H SiC表面生长一层SiO2层,接着置于N2气氛中经过不同的温度退火,使用红外显微仪分别测量退火前后的红外反射谱,通过观测表面氧化层SiO2的红外反射谱图中特征反射峰位(1090cm-1附近)的变化,以判断退火前后表面氧化层密度的变化情况,进一步推断氧化层的结构变化与杂质类型.
A thin SiO2 film was grown on the 6HSiC by dry oxidation. It was annealed in different temperature around in N2. Infrared reflectance was used in measured the characteristics of the SiO2 layer on SiC.A peak appeared at about 1090cm-1 can be used to monitor the density of the SiO2 layer.After annealing in N2,the peak shifted towards high frequency.This shift became distinct after annealing at 1100℃,which showed a decrase of the density and was considered that the interstitial impurity had diffused from SiO2.
出处
《四川大学学报（自然科学版）》
CAS
CSCD
北大核心
2003年第4期707-710,共4页
Journal of Sichuan University(Natural Science Edition)
