摘要
研究了磁控溅射陶瓷靶制备的氧化铟锡薄膜的微观结构和光电性能;给出了它的XPS、AFM分光光度计测试结果。结果表明:氧化铟锡膜内部Sn以SnO2相存在,In以In2O3相存在,含量分别在5.8%和85.0%左右;薄膜表面十分致密,呈多晶球状微粒均匀分布,平均粒径为50nm;可见波段光透过率全部超过80%,近红外反射率也较高,在2500nm处达到70%,电阻率为2.7×10-4Ω·cm,禁带宽度Eg≥3.35eV。
Teh microsuucture and photoelectric performance of Indium Tin Oxide film prepared by magnetron sputtering ceramic target have been studied. The testing results of X\|ray photoelectron spectroscopy, atomic force microscopy and spectrophotometer have been presented. They showed that the microstructure of Indium Tin Oxide film was characterized SnO2 and In2O3 phases, with content of 5.8% and 85.0%, respectively. The film surface was compact and characterized many equal crystal ball particulate with average diameter of 50 nm. The film had a transmittance over 80.0% to completely visible light and a rather high reflectivity (over 70% at 2 500 nm) to near infrared rays. Resistivity of the film is 2.7×10-4 Ω·cm. Forbidden bandwidth of over 3.35 eV.
出处
《真空与低温》
2003年第2期98-101,共4页
Vacuum and Cryogenics
