摘要
本文报导用特殊方法观察到气流在MOCVD反应室里的分布形态,并以此为根据,通入不同流量的有机物生长HgCdTe。测试结果表明:气体流量对HgCdTe材料组份均匀性影响很大。在一个适当的流量下,能生长出良好的HgCdTe。
This paper described the gas distribution pattern obtained at different flow rate in the reaction chamber of the MOCVD with a speciai method. On this basis, with the introduction of the DMCd DETe, Hg, We can get different HgCdTe layers. The experimental results show that the gas flow rate has a great effect on the HgCdTe composition uniformity. A good quality layers only at a proper flow rate can be grown.
出处
《激光与红外》
CAS
CSCD
北大核心
1992年第3期47-49,共3页
Laser & Infrared
