摘要
结合中等剂量的氢离子注入和阳极键合(Anodicbonding),利用智能剥离技术(Smart-cut)成功转移了一层单晶硅到玻璃衬底上。采用剖面透射电镜、高分辨透射电镜、扫描电镜和拉曼光谱等对SOG材料进行了研究,结果表明此技术制备的SOG材料具有界面陡峭、平整,顶层硅单晶质量完好等优点。
Monocrystalline Silicon films were transferred to a glass substrate by Smart-cut technique which based on H+ions implantation, anodic bonding and layer splitting. The SOG structures were characterized by cross-section transmission electron microscopy (XTEM), HRTEM,Scanning electron microscopy (SEM) and Raman Spectroscopy. The results show that SOG materials fabricated by Smart- cut has advantages of steep top Si/glass interface and good monocrystalline Si quality.
出处
《功能材料与器件学报》
CAS
CSCD
2003年第2期219-221,共3页
Journal of Functional Materials and Devices
基金
国家自然科学基金资助项目(No.90101012)
