摘要
用溅射-退火反应的方法制作NiSi/Si肖特基二极管,采用Ti和Co两种金属保护层结构,以提高硅化物的形成质量。对肖特基二极管反向I-V特性的测量结果表明:相对于没有保护层的样品,有保护层样品的反向电流明显减小,而且Ti保护层结构比Co保护层结构的作用更明显;没有保护层的管子和有保护层的管子具有不同的边缘特性。实验数据能够很好地用非均匀肖特基势垒输运模型拟合。提取出的参数表明,保护层结构在不同程度上有效地提高了肖特基势垒的均匀性,从而减小了肖特基二极管的反向电流;边缘特性的差异性也是由于肖特基势垒均匀性的改变而导致的。金属保护层能提高肖特基势垒的均匀性是因为保护层抑制了工艺过程中的氧污染。
NiSi/Si Schottky barrier diodes were fabricated using a sputteringannealing method A Ti or Co capping layer was introduced to improve the quality of nickel silicide The reverse IV characteristics of the diodes were measured It was found that the reverse current decreased in the samples with a capping layer, compared to the samples without capping layers In addition, the Ti capping layer reduced the reverse current more than the Co capping layer did, and the Ti capping layer produced a new peripheral characteristics in the diodes with a Ti cap The data was fitted with an electron transport model for inhomogeneous Schottky barriers The parameter extracted showed that the capping layers improved the homogeneity of Schottky barrier at the NiSi/Si interface, and then, reduced the reverse current of the diodes with a cap layer The new peripheral characteristics were also attributed to the change of the Schottky barrier inhomogeneity The capping layers improved the Schottky barrier homogeneity because they suppressed the oxygen contaminations in the forming procedure of nickel silicide
出处
《微电子学》
CAS
CSCD
北大核心
2003年第2期109-112,共4页
Microelectronics
