摘要
利用PC1D计算了结构为n+ / p和n+ / p p+ 多晶硅薄膜太阳电池的晶粒尺寸和薄膜厚度对其Voc,Jsc和 η的影响。计算结果表明 :对无陷光结构的多晶硅薄膜太阳电池 ,要获得 10 %的效率 ,薄膜厚度至少应大于 2 2 μm ;晶粒尺寸大于薄膜厚度的 4倍时 ,晶界复合对载流子寿命的影响可以忽略 ;同时表明 :太阳电池的背表面场 (BSF)
Effects of thickness and grain size on Voc,Jsc,and ( of n +/p and n +/p p + polycrystalline silicon thin film solar cells have been calculated by PC1D.The results show that if we want to obtain an polycrystalline silicon thin film solar cell with efficiency 10%,22μm film thickness for the thin film silicon solar cells without light trapping are needed.When the grain size is more than 4 times size of film thickness,the influence of grain boundary on minority carrier lifetime can be ignored.The results also show that Back Surface Field (BSF) plays a great role in enhance the performance of polycrystalline silicon thin film solar cells.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2003年第2期264-268,共5页
Acta Energiae Solaris Sinica
基金
云南省省院省校合作资助项目 ( 99YSJ0 1)
关键词
多晶硅薄膜
晶粒尺寸
厚度
太阳电池
polycrystalline silicon thin film
grain size
thickness
solar cells
