摘要
采用非线性光电导技术测量2.06μm激光激发的GaAs本征半导体三光子吸收,观察到三光子和单光子吸收的混合光电导,测得了三光子吸收系数.测量结果与理论计算符合较好.
By using nonlinear photoconductivity (NLP) technique, the experimental inves-
tigation on three-photon absorption processes in an intrinsic GaAs semiconductor illumi-
nated by a pulsed laser at 2.06μm is described. Hybrid photoconductivity of three-photon
and single photon absorption has been observed. Three-photon absorption coefficient has
been measured, and the experimental value is in good agreement with the theoretical
results.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第4期331-335,共5页
Journal of Infrared and Millimeter Waves
关键词
非线性
光电导
砷化镓
多光子吸收
three-photon absorption, nonlinear photoconductivity.
