摘要
研究了氟等离子体离子注入对Au/Ni/n-GaN二极管的电学和光学特性的影响。结果表明,离子注入后,器件的反向泄漏电流从1×10-5 A降低至1×10-12 A (偏压为-5 V),整流特性获得显著提高;器件的内建势垒高度从1.30 eV增至3.22 eV,接近GaN的禁带宽度,表明最高价带处产生了高浓度的空穴;器件能够实现紫外光探测,在偏压为-5 V时,紫外/可见光抑制比约为1×103,最高响应度约为0.045 A/W,最大外量子效率约为15.5%,瞬态响应平均衰减时间常数约为35 ms。由此可见,氟等离子体离子注入是调节Au/Ni/n-GaN二极管电学和光学性能的有效手段之一。
The impacts of the fluorine plasma ion implantation on the electrical and optical characteristics of Au/Ni/n-GaN diodes were studied.The results showed that the ion implantation could effectively depress the reverse leakage current from 1×10-5 A to 1×10-12 A at-5 V,and greatly improve the rectifying behavior of the diodes.The built-in potential barrier was enhanced from 1.3 eV to 3.22 eV,extremely close to the band gap of GaN.It meant that high concentration holes were produced in the highest valence band.The ultraviolet light detection was implemented.At-5 V,the UV to visible light rejection ratio was about 1×103,the peak responsivity was about 0.045 A/W,the external quantum efficiency was about 15.5%,and the average falling time constant of transient response was about 35 ms.Therefore,the fluorine plasma ion implantation was one of the effective means to modulate the electrical and optical characteristics of the Au/Ni/n-GaN diodes.
作者
羊群思
田葵葵
吴静
陈雷雷
刘楚乔
金宁
赵琳娜
闫大为
顾晓峰
YANG Qunsi;TIAN Kuikui;WU Jing;CHEN Leilei;LIU Chuqiao;JIN Ning;ZHAO Linna;YAN Dawei;GU Xiaofeng(Engineering Research Center of IOT Technology ApplicationsMinistry of Education,Department of Electronic Engineering,Jiangnan University,Wuxi,Jiangsu214122,P.R.China)
出处
《微电子学》
CAS
北大核心
2019年第3期399-403,共5页
Microelectronics
基金
国家自然科学基金资助项目(61504050,11604124,51607022)
关键词
氟等离子体离子注入
反向泄漏电流
紫外光响应探测
fluorine plasma ion implantation
reverse leakage current
ultraviolet photoresponse detection
