摘要
采用磁控溅射掩膜制备工艺,在n型Si衬底上分别制备了底栅型p沟道Cu_2O半导体薄膜场效应晶体管(TFTs).用XRD、SEM、XPS等检测分析方法对不同条件下制备的Cu_2O薄膜的晶体结构、表面形貌、化学成分进行了表征.对O_2通量、退火温度及沟道宽度等因素对半导体薄膜及器件特性的影响进行了对比研究.研究发现,O_2通量是制备Cu_2O半导体薄膜的关键因素,器件I_(DS)电流的绝对值随着栅压的绝对值的增大而增大,具有典型的p沟道增强型场效应晶体管特征.其Ⅳ特性与溅射沉积时间、沟道宽度、退火因素等有关,真空退火处理后有助于提高器件的I_(DS)的绝对值.测试表明,制备的沟道宽度为50μm的典型器件的电导率、电流开关比和阈值电压分别为0.63S/cm,1.5×10~2及-0.6V.
The bottom-gate p-channel Cu2 O thin film field-effect transistors were fabricated on n-type Si substrates using room temperature magnetron sputtered copper with mixed O2/Ar gases.The crystal structure,surface morphology and chemical composition of the prepared Cu2 O thin films were characterized by XRD,XPS and SEM analytical instruments.The testing factors of O2 flux,annealing temperature and channel width affecting on the Ⅳcharacteristics of Cu2 O semiconductor devices were studied.The analytical result shows that the O2 flux is a key factor in the preparation of the best Cu2 O semiconductor thin films and the absolute value of IDSincreases with the increase of gate voltage.The synthesized transistor exhibited p-type behavior and gate voltage control performance with average conductivity,on-to-off current ratio,and threshold voltage of 0.63 S/cm,1.5×102,and-0.6 V,respectively.
作者
李梦轲
吕东徽
赵佳佳
周施彤
刘丹妮
LI Mengke;LüDonghui;ZHAO Jiajia;ZHOU Shitong;LIU Danni(School of Physics and Electronic Technology,Liaoning Normal University,Dalian 116029,China)
出处
《辽宁师范大学学报（自然科学版）》
CAS
2019年第1期47-53,共7页
Journal of Liaoning Normal University:Natural Science Edition
基金
国家自然科学基金资助项目(61076104)
辽宁省自然科学基金重点资助项目(2017523)
