摘要
氧化铟作为一种新的气敏材料,有望在一定程度上解决现有气体传感器中存在的选择性差和工作温度高等问题。因此,按照被检测气体的种类,从In2O3的气敏材料制备及气敏性能两方面对现有性能较好的In2O3气体传感器进行了评述,并指出了In2O3基半导体气体传感器的发展方向。
?In2O3,as a kind of new gas sensing material,will solve some problems in the gas sensors,such as poor selectivity,high working temperature.Therefore,the gas sensing properties of In2O3 are emphasized according to the species of gases.The preparation of material and simple judgment on the sensors are also included.
出处
《传感器技术》
CSCD
北大核心
2003年第3期1-3,共3页
Journal of Transducer Technology
关键词
三氧化二铟
气敏材料
气体传感器
indium oxide(In_2O_3)
gas sensing material
gas sensor
