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二维过渡金属二硫属化合物的应力调控 被引量:1

Strain regulation of two-dimensional transition metal dichalcogenides
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摘要 二维过渡金属二硫属化合物(TMDs)因其优异的性质,在光电器件、能量存储、催化等领域具有重要的应用价值.调节材料的晶格结构可以有效地调控其性质并扩展其应用领域,而应力调控是一种高效调节二维TMDs晶格结构与性质的重要方法.在过去的几年中,研究人员不断丰富应力调控二维TMDs的策略,拓展其在柔性光电器件、传感器、催化以及储能等领域的应用.本文主要综述了应力调控二维TMDs结构的各种策略、性质的调控效果以及在器件中的应用,展望了应力调控二维TMDs的发展趋势,并指出了未来研究中存在的挑战. As layered materials beyond graphene began to be discovered after 2004,two-dimensional(2 D)transitional metal dichalcogenides(TMDs)became vital to fundamental research and practical applications,owing to their unique crystal structures and excellent properties,as well as their diverse electronic band structures.2 D TMDs have played an important role in electronics,optoelectronics,energy storage and catalysis.To meet the increasing demand for programmable and function-integrated devices,property modulation has been considered an essential strategy for employing the useful properties of 2 D TMDs.This can be achieved through strain regulation.In comparison to conventional external electrical field induction,strain regulation is much more efficient.In detail,external induction through the electric field leads to electron delocalization along the field direction,which then induces the transformation of band structures.Yet the electric field exhibits only a small modulation for monolayer TMDs.On the contrary,strain regulation exhibits excellent tuning efficiency for continuous and reversible modulation.Based on lattice transformation,strain regulation of 2 D TMDs can lead to different overlaps of the d and p orbitals of metal and chalcogen atoms,which then affects the electronic structures of 2 D TMDs.As a result,strain regulation has become a commonly used strategy for the property-tuning of 2 D TMDs.Therefore,it can be applied to electronics,optoelectronics,magnetic devices,and piezoelectronics.The strategies for introducing strain to 2 D TMDs can be classified into lattice induction,local deformation,macroscopic regulation,and so on.Lattice induction is attributable to structural distortions and mismatches,including atomic defect induction and lattice mismatch induction.The former demonstrates that the microenvironment affected by atomic vacancies and doping atoms can introduce strain to 2 D TMDs.The latter demonstrates that the lattice mismatches between two materials(between two different TMDs in a heterostructure
作者 周鹭 付磊 Lu Zhou;Lei Fu(不详The Institute for Advanced Studies,Wuhan University,Wuhan 430072,China;College of Chemistry and Molecular Sciences,Wuhan University,Wuhan 430072,China)
出处 《科学通报》 EI CAS CSCD 北大核心 2019年第17期1817-1831,共15页 Chinese Science Bulletin
基金 国家自然科学基金(21673161) 中德科学中心基金(1400)资助
关键词 二维材料 过渡金属二硫属化合物 应力 性质 调控 应用 two-dimensional material transition metal dichalcogenides strain properties regulation application
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