摘要
以电荷控制方程而建立的IGCT综合型电荷控制模型 ,经关键性的关断电流和关断电压进行了仿真分析 ,所得结果与实际结果吻合。因此该模型是有效可行的 ,可用于IGCT的开关特性分析和集成门极电路设计。
Integrated Gate Commutated Thyristor(IGCT)super charge control model is developed by applying the general charge control equation to the device. The turn off currents are simulated and as a result, their waveforms tally with the measuring waveforms with given parameters. Therefore the super charge control model is suitable for IGCT switching behavior analysis and IGCT gate circuit design.
出处
《电子器件》
CAS
2003年第1期25-28,共4页
Chinese Journal of Electron Devices
