摘要
成功地制备了微晶平均直径在10～45量子限 CdS_xSe_(1-x)半导体掺杂非线性光学玻璃。透射电镜观察了微晶结构及形貌特征。用四波混频技术测得玻璃的三阶非线性极化率 x^(3)=1×10^(-3)esu、非线性响应时间为35psec。研究了半导体掺杂玻璃光致载流子三维量子限效应、亚带结构、微晶尺寸,以及与带隙能之间的关系。从理论上分析了微晶尺寸、微晶体积占有率与三阶非线性极化率 x^(3)之间的关系。
The quantum-confined CdS_xSe_(1-x) microcrystallite-doped glasses with 10-45 size particles are successfully prepared.Transmission electron microscopy has been used to observe the microcrystallite structure and morphology characteristics in glasses.The third-order nonlinear susceptibility and plasma recombination time of the glass is measured by Four-wave mixing technique.The results showed x^((2))= 1×10^(-8)esu,τ=35psec.The dependence of photogenerated carrier 3- dimensional quantum-confined effect,susband structrue,microcrysta- llite size and band gap energy in semiconductor-doped glass are stud- ied.We analyze thoertically the dependence of microcrystallite size, volume occupied ratio and third-order nonlinear susceptibility x^((3)).
出处
《光学机械》
CSCD
1992年第1期146-149,共4页
