摘要
With the purpose of investigating the origin of ferromagnetism(FM), Mn-doped Zn O thin films had been fabricated by radio frequency(rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped Zn O thin films was conducted by X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), and superconducting quantum interference device(SQUID). With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mndoped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mn2+on the ferromagnetic behavior, OVplays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure.
With the purpose of investigating the origin of ferromagnetism（FM）, Mn-doped Zn O thin films had been fabricated by radio frequency（rf） magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped Zn O thin films was conducted by X-ray diffraction（XRD）, X-ray photoelectron spectroscopy（XPS）, and superconducting quantum interference device（SQUID）. With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mndoped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mn2+on the ferromagnetic behavior, OVplays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure.
