摘要
目的探讨砷剂对角质形成细胞DNA合成和相关转录因子E2F1表达的影响。方法以体外培养的角质形成细胞株为对象,不同浓度砷剂处理后,采用3H-TdR实验检测角质形成细胞DNA合成,并用RT-PCR方法研究细胞E2F1表达情况。结果在0.5～16 nmol/L药物浓度范围内,DNA合成加速,促进细胞增殖。但随着砷剂浓度继续升高,3H-TdR掺入量降低,逐渐回到基线水平;RT-PCR结果显示:DNA合成加速的HaCaT细胞组,伴有E2F1mRNA水平的上调。结论一定浓度范围内的砷剂可促进角质形成细胞株HaCaT细胞的DNA合成加速,增强转录因子E2F1的表达,可能是砷相关皮肤病的病理机制之一。
Objective To study the effects of low concentration of arsenic on cell proliferation and expression of E2F1 in keratinocyte. Methods Human epidermal keratinocyte (cell line HaCaT) was cultured in vitro.3H-TdR method was used to detect DNA synthesis of keratinocyte treated with various concentration of arsenic. The expression of E2F1 in keratinocyte was assessed by RT-PCR method. Results Ranging from 0.5nmol/L to 16nmol/L,arsenic trioxide produced a modest increase of keratinocyte DNA synthesis. The amount of incorporated 3H-TdR decreased and returned to baseline levels at concentrations more than 16nmol/L. RT-PCR analysis showed that levels of E2F1 mRNA was elevated in HaCaT cells with increased DNA synthesis compared with that of untreated cells. Conclusion Certain concentration arsenic led to enhanced DNA synthesis and increased expression of E2F1, which may be a part of the pathological mechanism of skin disease related to arsenic.
出处
《中国皮肤性病学杂志》
CAS
北大核心
2003年第1期9-11,共3页
The Chinese Journal of Dermatovenereology
