摘要
介绍了一种新型的半导体断路开关 ,它采用 P+ - P- N - N+ 的半导体结构 ,可完成亚 ns级的关断 ,关断电流达数 k A、承受反向电压达百 k V、重复频率达数 k Hz。在介绍SOS结构和主要特性的基础上 ,还介绍了基于
In this paper, a novel opening switch called semiconductor opening switch(SOS), with P +-P-N-N + semiconductor structure, sub nanosecond interruption time and several kilo ampere interruption currents is introduced. The SOS device shows that its withstand voltage and repetition frequency is high up to several hundred kilo volts and several kilo hertz. The success in the manufacture of the device indicates a considerable progress of pulsed power technology. Besides the structure and main characteristics of the SOS device, the development of the study of pulsed power generator based on SOS effect is also introduced under the expectation of improving the relative technology.
出处
《高电压技术》
EI
CAS
CSCD
北大核心
2002年第B12期23-25,共3页
High Voltage Engineering
