摘要
文中针对引起开关柜温升的涡流损耗解决方案进行理论分析,采用有限元软件进行仿真计算涡流损耗,提出利用磁旁路方法进行开关柜柜体损耗优化;比较分析两种优化方案对开关柜柜体的温升影响,仿真结果验证优化方案的合理性,该方法的应用对于开关柜产品的性能提升起到重要作用。
The theoretical analysis in this paper to solve the eddy current loss caused by the switch cabinet temperature rise scheme,simulation calculation of eddy current loss by using finite element software,the switch cabinet body loss optimization using magnetic shielding method;comparative analysis of two kinds of optimization scheme of switch cabinet body temperature effect,the simulation results verify the rationality of the optimization scheme,the application of the method to an important role for the performance of the switch cabinet product upgrading.
作者
刘旭光
顾小虎
姜富修
LIU Xuguang;GU Xiaohu;JIANG Fuxiu(NARI Group Corporation(State Grid Electric Power Research Institute),Nanjing 211100,China;Shanghai Zhixin Electric Co.,Ltd.,Shanghai 200000,China;Jiangsu Nari Power Electric Co.,Ltd.,Nanjing 211100,China)
出处
《高压电器》
CAS
CSCD
北大核心
2019年第8期96-100,107,共6页
High Voltage Apparatus
关键词
开关柜
温升
磁旁路
有限元分析
switchgear
temperature rise
magnetic bypass
finite element analysis
