摘要
随着集成电路的快速发展,由器件密度和连线密度不断增加、线宽逐渐减小带来的RC延迟成为了互连线可靠性的面临的最大难题。研究表明,低k材料的应用是减小RC延迟,降低串扰和功耗的重要途径。为了适应ULSI高速、高集成度的发展,低k互连介质材料的探索是集成电路的必然选择。本文系统地介绍了低k互连介质材料的特性、分类和降低k值的诸多方法。并且以反相器电路模型为例,应用AFD原理对不同低k材料的电路模型进行了AFD的计算,定量地分析不同低k材料对电路可靠性影响。
With the rapid development of integrated circuit, the RC delay caused by the increase of device density and wire density and the decrease of line width became the biggest problem for the reliability of interconnect wires. It is reported that the application of low-k material is the important measure to reduce RC delay, crosstalk and power dissipation. In order to adapt to the development of high speed and high integration for ULSI, the exploration for low-k material is the inevitable choice for integrated circuit.This paper systematically introduces the characteristics, classification and the methods to reduce k value of low-k material. Here taking the inverter circuit as example and using the AFD principle to calculate the AFD value for different low-k materials. It can realize the quantitative analysis of the impact for different low-k materials on the circuit reliability.
出处
《功能材料与器件学报》
CAS
2017年第1期6-11,共6页
Journal of Functional Materials and Devices
基金
青海省2017年基础研究计划项目
编号(2017-ZJ-753)
青海省自然科学基金资助项目(2016-ZJ-922Q)
青海省科技厅应用基础研究计划资助项目(2015-ZJ-721)
教育部"春晖计划"项目(Z2016071)
青海民族大学本科教学研究项目(2016-BKJXYB-09)
关键词
低K材料
寄生耦合
RC延迟
空气隙
原子通量散度
low-k material
parasitic coupling
RC delay
Air-gap
atoms flux divergence(AFD)
