摘要
石墨烯具有优良的光电特性,它能够替代传统的ITO材料用作GaN-LED的透明导电层。为了使上述应用实现工业化生产,利用热壁CVD研究了石墨烯在GaN表面直接生长的最佳条件,解释了直接生长的机理,直接生长的最佳条件为生长温度800℃,生长时间60 min,CH_4和H_2的分压比分别为1.59%和3.17%,该条件下得到具有明显2D峰的多层石墨烯。利用冷壁CVD研究了石墨烯在GaN表面的低温生长并制造了相应的GaN-LED,测试了其性能,结果表明生长温度高于700℃时器件的性能明显降低。该研究对实现石墨烯在LED中的工业化应用具有积极意义。
Graphene features in its excellent photoelectric properties. Therefore, it can replace the traditional ITO material as a transparent conductive layer of GaN-LED. In order to realize the industrial production of the above applications, the direct preparation technology of graphene on GaN surface by hot-wall CVD was studied and the growth mechanism was explained. The results demonstrate that the optimal conditions for direct growth were growth temperature of 800 ℃, growth time of 60 min, and the intrinsic standoff ratio of CH4 and H2 are 1.59% and 3.17% respectively. Under this condition, multilayer graphene with obvious 2 D peak was obtained. The low temperature growth of graphene on GaN surface was studied by cold-wall CVD. The corresponding GaN-LED was produced and its performance was tested. Through producing and testing of GaN-LEDs, it is found that the performance of the device was significantly reduced when the growth temperature was higher than 700 ℃. This research plays certain significant role in realizing the industrial application of graphene in LED.
作者
樊星
郭伟玲
熊访竹
董毅博
王乐
符亚菲
孙捷
FAN Xing;GUO Weiling;XIONG Fangzhu;DONG Yibo;WANG Le;FU Yafei;SUN Jie(Key Laboratory of Optoelectronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;National and Local United Engineering Laboratory of Flat Panel Display Technology,College of Physics and Information Engineering,Fuzhou University,Fuzhou 350116,China)
出处
《功能材料》
EI
CAS
CSCD
北大核心
2019年第3期3085-3089,共5页
Journal of Functional Materials
基金
国家科技重大专项资助项目(2017YFB0403100
2017YFB0403102)
国家自然科学基金资助项目(11674016)
