摘要
针对150 kW高功率密度电力电子直流变压器功率模组设计中的散热问题,研究高频导线热损耗原理,电磁—热耦合仿真计算温升,从涡流损耗的机理改进导线结构,仿真分析降低热损耗的有效性,导体及模组结构件温升降低至30.5 K以下。对高压侧模组中铝基板散热器翅片参数优化设计,但功率器件仍有局部温升过高问题,再结合蒸汽腔均热技术开发新型高效散热器,从热阻理论分析、温升仿真计算到单板测试验证均热板导热系数达到4000 W/(m·K),功率器件温升降低至31.9 K。搭建试验平台,对研制的功率模组样机按额定功率运行并实测,模组功率密度达到1.92 kW/L,且重要器件均满足温升目标,电力电子模组紧凑化集成的同时保障了可靠性。
In view of heat dissipation in the design of 150 kW high⁃power⁃density electronic DC transformer power module,the principle of heat loss of high⁃frequency conductor is studied.The temperature rise is calculated by elec⁃tromagnetic thermal coupling simulation.The conductor structure is improved from the mechanism of eddy current loss,the effectiveness of reducing heat loss is analyzed by simulation,and the temperature rise of conductor and mod⁃ule structure is reduced to less than 30.5 K.The parameters of fin of the aluminum base radiator in the module of high voltage side is optimized,but the temperature rise of the IGBT&SiC is still too high.The new and high efficiency ra⁃diator is developed in combination with the vapor chamber soaking technology.It is verified from the theoretical anal⁃ysis of thermal resistance and temperature rise simulation that the thermal conductivity of the vapor chamber reaches 4000 W/(m·K),and the temperature rise of the power element is reduced to 31.9 K.Finally,the test platform is set up and the temperature rise of the developed power module prototype is operated at rated power.It is measured that the power density of the module reaches 1.92 kW/L and the important elements meet the temperature rise target,thus the reliability of the power electronic modules,at the time of compact integration,is also assured at the same time.
作者
殷超
解鹏程
刘彬
于海波
熊杰
YIN Chao;XIE Pengcheng;LIU Bin;YU Haibo;XIONG Jie(NR Electric Co.,Ltd.,Nanjing 211102,China)
出处
《高压电器》
CAS
CSCD
北大核心
2024年第12期143-151,共9页
High Voltage Apparatus
基金
国家电网有限公司科技项目(5500-202040326A-0-0-00)。
关键词
高功率密度
温升控制
高频载流导线
蒸汽腔均热
试验平台
high power density
temperature rise control
high⁃frequency⁃current conductor
vapor chamber
test platform
