摘要
SiC MOSFET开关速度快导致其对测试平台的寄生参数较为敏感,而高电压和大电流的特性也为测试平台设计带来挑战。自主设计和搭建了一套集成化和规范化的大功率双脉冲测试平台,利用叠层母排结构的低杂感集成化设计,减小器件过快的开关速度对主回路寄生电感的影响;通过驱动过欠压保护电路设计,减小大电流密度的影响,保证器件可靠开通和关断。为验证该测试平台的实用性,选取几种国内外不同厂家的SiC MOSFET进行主要动态参数在不同结温下的测试及分析,全面评估了器件动态特性与温度的关系,研究结果对器件的生产和应用具有一定意义。
The fast switching speed of SiC MOSFET makes it more sensitive to parasitic parameters of the test platform,and the characteristics of high voltage and high current also bring challenges to the design of the test platform.A set of integrated and standardized high-power dual-pulse test platform was independently designed and built.The effect of the excessive switching speed of the device on the parasitic inductance of the main loop was reduced by using the low stray inductance integrated design of the laminated busbar structure.The design of the over and under voltage protection circuit of the driver was used to reduce the influence of high current density and ensure the reliable turn-on and turn-off of the device.In order to verify the practicability of the test platform,several SiC MOSFETs from different manufacturers at home and abroad were selected to test and analyze the main dynamic parameters at different junction temperatures,and the relationship between the dynamic characteristics and temperature of the device was comprehensively evaluated.The research result has certain significance for the production and application of thedevice.
作者
杨振宝
席善斌
褚昆
张欢
张魁
赵海龙
Yang Zhenbao;Xi Shanbin;Chu Kun;Zhang Huan;Zhang Kui;Zhao Hailong(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;Hebei Beixin Semiconductor Technology Co.,Ltd.,Shijiazhuang 050051,China)
出处
《半导体技术》
CAS
北大核心
2024年第12期1121-1134,共14页
Semiconductor Technology
