摘要
半导体器件输出结电容随电压的升高非线性变化。为准确提取高压工况下输出结电容,提出一种基于开关瞬态振荡过程的半导体器件输出结电容测量方法。首先,探讨器件关断瞬态激发的高频振荡特征与结电容的数学关系,并形成对应的测量步骤。其次,从寄生电感、寄生电阻2个方面对影响精度的因素进行讨论。最后,搭建测试平台,对不同型号及封装的半导体器件进行测量结果的验证。实验表明,所提方法能够测量器件额定工作点处的输出结电容值,具有测试一致性高、可扩展性强等优势。
The output capacitance of semiconductor devices exhibits nonlinear changes with increasing voltage.In order to accurately extract the output junction capacitance under high voltage operating conditions,a measured method for the output junction capacitance of semiconductor devices based on the transient switching oscillation process is proposed.Firstly,the mathematical relationship between the high frequency oscillation frequency of device turnoff transient excitation and the junction capacitance are explored,and the corresponding extraction steps is formed.Secondly,the factors affecting the accuracy are discussed from the perspectives of parasitic inductance and parasitic resistance.Finally,a testing platform is built and the extraction results of semiconductor devices of different models and packages are verified.The experiment shows that the proposed method can extract the output junction capacitance value at the rated operating point of the device,and has advantages such as high testing consistency and strong scalability.
作者
李昊阳
郑艳文
李皓
陈瑞文
胡斯登
LI Haoyang;ZHENG Yanwen;LI Hao;CHEN Ruiwen;HU Sideng(College of Electrical Engineering,Zhejiang University,Hangzhou 310027,China;Wolong Electric Group Co.,Ltd.,Shaoxing 312300,China;CSSC Kunming Branch of the 705 Research Insititute,Kunming 650033,China)
出处
《电器与能效管理技术》
2024年第10期42-47,共6页
Electrical & Energy Management Technology
基金
中央高校基本科研业务费专项资金资助(226-2024-00072)。
关键词
非线性
关断振荡
输出结电容
高压半导体器件
non linearity
turn off oscillation
output junction capacitance
high voltage semiconductor devices
