摘要
飞秒激光烧蚀技术是半导体表面改性的一项重要技术手段。本文旨在探究飞秒激光烧蚀技术对砷化镓表面微纳结构及光电性能的调控效应。通过在不同环境下进行飞秒激光加工,观察到样品表面形成了规则的条纹状结构、部分规则的条纹状结构和不规则的椭圆状结构。通过使用X-射线光电子能谱仪测试了材料表面性质的变化,同时通过傅里叶变换红外光谱分析验证了微纳结构对光吸收率产生的影响。此外,电流-电压曲线测量结果表明,经过飞秒激光烧蚀处理后的样品显示出更高的电阻率。证明了气体的选择对微纳结构和光电性能的调控有着重要影响。这项研究为砷化镓光电子器件,特别是高效、耐压型探测器等性能的提升提供了新的技术手段。
Objective In the current rapid development of optoelectronics technology,gallium arsenide as a semiconductor material plays a crucial role in optoelectronic devices such as lasers and photodetectors in the field of communication.As a typical representative of compound semiconductor materials ofⅢ-Ⅴgroups,gallium arsenide has a direct bandgap of dual-energy valleys and high mobility,and its excellent optoelectronic and thermal properties are highly favored.However,increasing the absorptivity and resistivity of the material should be considered to enhance its key properties such as responsivity and thus expand the application fields of GaAs more comprehensively and further optimize the GaAs performance,especially in the detection field.In the study of GaAs,laser ablation technology has great potential.We focus on the enhancement of photovoltaic properties by laser ablation technique.The high energy density and ultrafast time scale of femtosecond laser pulses can form plasma on the surface of semiconductor materials and produce micron-scale micro-nano-structures,thus enhancing light absorption.Our goal is to understand the effects of different environments on the surface properties of GaAs by systematic experiments and in-depth theoretical analysis,and finally provide more comprehensive references for the future practical applications of this material.Methods We employ intrinsic GaAs material and conduct laser ablation experiments by adjusting various processing parameters including laser power,scanning speed,spot size,and scanning spacing.After determining the optimal processing parameters,a confined gas cavity is introduced and laser ablation experiments are carried out under four different environments,including air,vacuum,nitrogen,and sulfur hexafluoride.Additionally,the surface morphology of the material is observed and analyzed in detail using scanning electron microscopy(SEM),with the mechanism of surface structure formation studied in depth.To analyze the changes in the properties of the material surface,
作者
李扬
项焱蓉
蓝志强
金钻明
朱亦鸣
Li Yang;Xiang Yanrong;Lan Zhiqiang;Jin Zuanming;Zhu Yiming(School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China)
出处
《光学学报》
EI
CAS
CSCD
北大核心
2024年第17期330-337,共8页
Acta Optica Sinica
基金
太赫兹科学技术前沿国家基础科学中心(61988102)
国家重点研发计划(2023YFF0719200)
国家自然科学基金(62322115)。
关键词
超快光学
光电子学
飞秒激光
激光烧蚀
光电导材料
ultrafast optics
optoelectronics
femtosecond laser
laser ablation
photoconductive material
