摘要
太赫兹真空电子器件物理结构尺寸变化随着波长的减小而减小,对微小结构的尺寸精度与表面粗糙度要求也大大增加。随着器件频率进入到太赫兹频段,慢波结构的深度达到几十微米或者百微米量级,加工的难点主要有:材料为金属,结构超深,表面粗糙度要求达到几十纳米量级,微电铸后金属含氧量极小,结构密度大不漏气,经得起后续近千摄氏度的高温处理工艺等。文章介绍了太赫兹频段下器件慢波结构的加工方式,着重讨论利用深反应离子刻蚀(DRIE)技术和紫外−光刻、电铸(UV-LIGA)技术加工超深金属慢波结构的技术和和特点,并介绍了本实验室利用UV-LIGA加工折叠波导的研究进展。
With the increase in frequency of vacuum electronic devices,the size of slow wave structure is reduced to tens of microns,and requirements for dimensional accuracy and surface roughness are constantly increasing during processing.The processing method of slow wave structure at terahertz frequency is introduced in this paper.The characteristics and research status of deep reactive ion etching(DRIE)and ultraviolet-Lithographie Galvanoformung Abformung(UV-LIGA)are discussed.The research progress of the folded waveguide with UVLIGA in national key laboratory of science and technology on vacuum electronics is also introduced.
作者
姜琪
李兴辉
冯进军
蔡军
潘攀
JIANG Qi;LI Xinghui;FENG Jinjun;CAI Jun;PAN Pan(National Key Laboratory of Science and Technology on Vacuum Electronics,Beijing Vacuum Electronics Research Institute,Beijing 100015,China)
出处
《真空科学与技术学报》
CAS
CSCD
北大核心
2024年第9期759-767,共9页
Chinese Journal of Vacuum Science and Technology
基金
大功率微波电真空器件技术国防科技重点实验室基金项目(10249)。
关键词
太赫兹真空电子器件
微机电系统
深反应离子刻蚀
紫外−光刻、电铸
慢波结构
Terahertz vacuum electronics devices
Micro-electro-mechanical system
Deep reactive ion etching
Ultraviolet-Lithographie Galvanoformung Abformung
Slow wave structure
