摘要
Semiconductors based on SiC have broad application prospects in particle detectors and power devices due to their excellent performance in extreme environments,such as environments in space exploration or nuclear facilities.4H-SiC is widely used.It has large forbidden bandwidth(3.2 eV)and high electron mobility(1200 cm^(2)·V^(-1)·s^(-1)).Consequently,4H-SiC Schottky barrier diodes(SBD)are capable of operating under harsh conditions with high temperatures and high levels of radiation.This new generation of particle detectors holds great potential^([1]).
