摘要
在静态随机存取存储器(SRAM)型现场可编程门阵列(FPGA)电路中,当电源启动并进行初始化时,SRAM单元通常会经历一个全面复位的过程。复位过程会导致SRAM单元内部的电荷分布形成一种特有的模式。提出了一种新的方法,利用配置内存中尚未使用的部分来识别电路,对8个Xilinx Virtex-7 FPGA进行总计200 000次的测量,评估了这种方法在同一电路中的一致性和在不同电路之间的差异性,以及随温度变化时和随时间老化后的稳定性。研究结果显示,SRAM物理不可克隆函数(PUF)能够有效地区分不同的FPGA电路。
In static random access memory(SRAM)-type field programmable gate array(FPGA)circuits,when the power supply is started and initialized,the SRAM cell usually undergoes a full reset process.The reset process results in a characteristic pattern of charge distribution within the SRAM cell.A new method is proposed to identify circuits using unused portions of configuration memory.A total of 200000 measurements are performed on 8 Xilinx Virtex-7 FPGAs to evaluate the consistency of this method within the same circuit and the differences between different circuits,as well as its stability with temperature changes and aging over time.The research results show that SRAM physically unclonable function(PUF)can effectively distinguish different FPGA circuits.
作者
郭俊杰
王婧
谢达
GUO Junjie;WANG Jing;XIE Da(Wuxi Esiontech Co.,Ltd.,Wuxi 214072,China)
出处
《电子与封装》
2024年第9期71-79,共9页
Electronics & Packaging
