摘要
在疲劳载荷作用下,绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)会发生结构损伤与性能退化,影响电力电子系统可靠性。对此,首先基于传热学理论推导焊层疲劳裂纹长度与热阻的关系,并以Darveaux模型表征IGBT焊层裂纹演化规律,提出一种IGBT性能退化模型及其待定系数的估计方法。其次,考虑实际工况的非平稳特征,利用响应面法建立IGBT变幅疲劳载荷模型,并基于雨流计数法与线性累积损伤准则实现IGBT性能退化量的评估。最后,以一款IGBT产品为例,实施功率循环试验,基于试验数据开展性能退化建模与分析,验证了模型与算法的有效性。
Under fatigue load,insulated gate bipolar transistor(IGBT)experience structural damage and performance degradation,impacting the reliability of power electronic systems.To address this,the relationship between solder layer fatigue crack length and thermal resistance is derived based on heat transfer theory,firstly.The Darveaux model is used to characterize the evolution law of solder layer cracks in IGBT,and a new IGBT performance degradation model along with a method for estimating its undetermined coefficients is proposed.Then,considering the non-stationary characteristics of actual working conditions,a variable amplitude fatigue load model for IGBT is established using the response surface methodology.The rainflow counting method and linear cumulative damage criterion are then employed to assess the extent of IGBT performance degradation.Finally,using a type of IGBT product as an example,power cycling tests are conducted,and performance degradation modeling and analysis are carried out based on experimental data,verifying the effectiveness of the models and algorithms.
作者
康锐
陈玉冰
文美林
张清源
祖天培
KANG Rui;CHEN Yubing;WEN Meilin;ZHANG Qingyuan;ZU Tianpei(Hangzhou International Innovation Institute,Beihang University,Hangzhou 311115,China;School of Reliability and Systems Engineering,Beihang University,Beijing 100191,China)
出处
《系统工程与电子技术》
EI
CSCD
北大核心
2024年第9期3031-3039,共9页
Systems Engineering and Electronics
基金
国家自然科学基金(62073009)资助课题。
关键词
绝缘栅双极型晶体管
退化建模
退化分析
焊层疲劳
insulated gate bipolar transistor(IGBT)
degradation modelling
degradation analysis
solder layer fatigue
