摘要
纳米孔测序作为最新一代的基因测序技术,在生物医学和临床应用中起着至关重要的作用。测序系统中的MEMS结构通常采用传统光刻工艺来实现,本文首次运用紫外纳米压印光刻(UV-NIL)工艺来验证实现纳米孔测序系统中的MEMS芯片的可能性。采用传统光刻工艺,制造了3种用于纳米孔测序的MEMS双层结构的硅晶圆。这些硅晶圆被用作母板,将其MEMS结构图案精准复制到聚二甲基硅氧烷(PDMS)上,形成压印软模,再用UV-NIL工艺在硅基底上压印出所需的MEMS结构。最后,通过光学和电学两种测试表征手段,成功证实UV-NIL工艺在制造MEMS芯片方面的有效性和可行性。相较于传统光刻,UV-NIL的成功运用将极大提高工艺稳定性并大幅缩减成本。
Nanopore sequencing,as the latest generation of gene sequencing technology,plays a crucial role in biomedical and clinical applications.MEMS structures in sequencing systems are usually realized using conventional lithography processes,and this paper validates the possibility of realizing MEMS chips in nanopore sequencing systems for the first time using ultraviolet nanoimprint lithography(UV-NIL)process.Three silicon wafers with MEMS bilayer structures for nanopore sequencing are fabricated using conventional lithography.These silicon wafers are used as master plates to precisely replicate their MEMS structure patterns onto PDMS to form imprinted soft molds,which are then imprinted with the desired MEMS structures on silicon substrates using the UV-NIL process.Finally,the effectiveness and feasibility of the UV-NIL process in the fabrication of MEMS chips is successfully demonstrated through both optical and electrical test characterization methods.Compared with traditional lithography,the successful application of UV-NIL will greatly improve process stability and significantly reduce costs.
作者
姜保
侍南
吴炫烨
徐屹峰
JIANG Bao;SHI Nan;WU Xuanye;XU Yifeng(School of Microelectronics,Shanghai University,Shanghai 201800,China;Shanghai IndustrialμTechnology Research Institute,Shanghai 201800,China;Institute of Translational Medicine,Shanghai University,Shanghai 201800,China)
出处
《传感器与微系统》
CSCD
北大核心
2024年第8期79-82,共4页
Transducer and Microsystem Technologies
基金
上海市“科技创新行动计划”启明星项目(23QB1405100)
科技部重点研发计划项目(2019YFA0707004)
科技部重点研发计划项目(SQ2021YFF0700202)
上海市白玉兰人才计划浦江项目(23PJ1423400)。
关键词
纳米孔
基因测序
紫外纳米压印光刻
nanopore
gene sequencing
ultraviolet nanoimprint lithography(UV-NIL)
