摘要
为了改善钽酸锂(LiTaO_(3),LT)晶片的材料去除均匀性,提出一种考虑磨粒三维微切削的材料去除均匀性模型。根据钽酸锂晶体脆/塑性去除机理,结合研磨垫表面磨粒的分布特征,运用力平衡方程计算了研磨垫上各磨粒的切入深度与切屑截面积。通过运动学分析推导了双面研磨中磨粒运动轨迹方程,建立了考虑磨粒三维微切削的材料去除均匀性模型,并研究了齿圈与太阳轮转速比m、下研磨盘与太阳轮转速比n对材料去除均匀性的影响。最后,开展了钽酸锂晶片固结磨料双面研磨实验,测量了不同转速比m,n下晶片的总厚度变化,验证了模型。实验结果表明:材料去除均匀性受转速比m,n的影响较大,当转速比m,n分别为0.85,1.3时材料去除均匀性最佳,此时晶片的总厚度变化为0.83μm,实验结果与仿真一致。所建模型对改善钽酸锂晶片双面研磨材料的去除均匀性有一定的指导意义。
To enhance the uniformity of material removal for lithium tantalate(LiTaO_(3),LT)wafers,a model based on the three-dimensional micro-cutting of abrasive particles was developed.The model starts by analyzing the brittle and plastic removal mechanisms of LiTaO_(3) crystals,alongside the distribution of abrasive particles on the lapping pad.Using a force balance equation,it calculates the penetration depth and chip cross-section for each abrasive particle.A kinematic analysis subsequently derives the trajectory of these particles during double-sided lapping,leading to the establishment of the material removal uniformity model.Simulations were conducted to assess the effects of the speed ratios between the gear ring and the sun wheel(m)and between the gear ring and the lower plate(n)on material removal uniformity.Following this,experiments were performed on LiTaO3 wafers,measuring the Total Thickness Variation(TTV)across different speed ratios m and n to validate the model.Results indicate that the uniformity of material removal is significantly influenced by these speed ratios,achieving optimal uniformity at m=0.85 and n=1.3,resulting in a TTV of 0.83μm.The experimental findings align with the simulation,demonstrating the model′s potential to guide improvements in the double-sided lapping uniformity of LiTaO3 wafers.
作者
薛赛赛
郭晓光
贾玙璠
高尚
康仁科
XUE Saisai;GUO Xiaoguang;JIA Yufan;GAO Shang;KANG Renke(State Key Laboratory of High-Performance Precision Manufacturing,Dalian University of Technology,Dalian 116024,China)
出处
《光学精密工程》
EI
CAS
CSCD
北大核心
2024年第13期2081-2090,共10页
Optics and Precision Engineering
基金
国家自然科学基金资助项目(No.52175382)。
关键词
固结磨料研磨
钽酸锂晶片
磨粒运动轨迹
材料去除均匀性
fixed abrasive lapping
lithium tantalate
particle trajectory
material removal planarization
