期刊文献+

Al/Mg共掺杂Li_(2)MnO_(3)电化学性质的第一性原理计算

First-principles calculation of electrochemical properties of Al/Mg co-doped Li_(2)MnO_(3)
下载PDF
导出
摘要 双离子掺杂是改善富锂锰基正极材料Li_(2)MnO_(3)电化学性能及循环稳定性的有效方法,然而掺杂离子间微妙的相互作用对Li_(2)MnO_(3)性能的影响机制还不清晰。本研究通过第一性原理计算分别研究Mg单掺杂和Mg/Al共掺杂Li_(2)MnO_(3)的晶格结构、电子结构、O稳定性以及Li扩散动力学。结果表明:相对于Mg单掺杂,Mg/Al共掺杂能引起明显的晶格畸变,提高局域O的电化学活性,但同时会牺牲一定的O稳定性。此外,Mg/Al共掺杂还可以促进局域Li的层内扩散。本研究突出对比了Mg/Al共掺杂和Mg单掺杂对Li_(2)MnO_(3)电化学性能影响的差异,为优化富锂锰基正极材料设计提供理论依据。 Dual-ion doping is an effective method to improve the electrochemical properties and cycle stability of Li_(2)MnO_(3),a lithium-rich manganese-based cathode material.However,the influencing mechanism of the subtle interaction between doped ions on the performance of Li_(2)MnO_(3) is still unclear.This study investigated the lattice structure,electronic structure,O stability,and Li diffusion dynamics of Mg single doped and Mg/Al co-doped Li_(2)MnO_(3) through first-principles calculation.The results show that compared with Mg single doping case,Mg/Al co-doping can cause significant lattice distortion,enhance the electrochemical activity of local O,but also sacrifice some O stability,and promote the intralayer diffusion of local Li.This study highlights the differences in the effects of Mg/Al co-doping and Mg single doping on the electrochemical properties of Li_(2)MnO_(3),providing a theoretical basis for optimizing the design of lithium-rich manganese-based cathode materials.
作者 曾智泉 张时维 王建川 ZENG Zhiquan;ZHANG Shiwei;WANG Jianchuan(State Key Laboratory of Powder Metallurgy,Central South University,Changsha 410083,China;College of Energy and Electrical Engineering,Qinghai University,Xining 810016,China)
出处 《粉末冶金材料科学与工程》 2024年第3期162-171,共10页 Materials Science and Engineering of Powder Metallurgy
基金 国家自然科学基金资助项目(52171025) 中德合作研究小组项目(GZ1528)。
关键词 富锂正极材料 掺杂 电化学性质 第一性原理计算 锂离子电池 Li-rich cathode material doping electrochemical property first-principles calculation lithium-ion battery
  • 相关文献

参考文献4

二级参考文献17

  • 1Ferhat M, Zaoui A, Certier M, et al. Applicability of the empirical pseudopotential method to semicon- ductors with d valence electrons[J]. Phys. Lett. A, 1996, 216:187. 被引量:1
  • 2Sekkal W, Zaoui A. Monte Carlo study of transport properties in copper halides[J]. Physica, B, 2002, 315 : 201. 被引量:1
  • 3Haj Hassan F. El, Zaoui A, Sekkal W. Structural properties of copper halides [J ]. Mater. Sci. Eng. B, 2001, 87: 40. 被引量:1
  • 4Zaoui A, Ferhat M. High-pressure structural phase transition of BSb[J]. Phys. Status Solidi, B, 2001, 225 : 15. 被引量:1
  • 5Aouas M R, Sekkal W, Zaoui A. Pressure effect on phonon modes in gallium nitride: a molecular dynamics study[J]. Solid State Commun. , 2001, 120: 413. 被引量:1
  • 6Davydov V Yu, Klochikhin A A, Seiysan R P, etal. Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap[J]. Phys. Status Solidi B, 2002, 229: R1. 被引量:1
  • 7Matsuoka T, Okamoto H, Nakao M, etal. Optical bandgap energy of wurtzite InN[J]. Appl. Phys. Lett., 2002, 81:1246. 被引量:1
  • 8Wu J, Walukiewicz W, Yu K M, et al. Unusual properties of the fundamental band gap of InN[J]. Appl. Phys. Lett. , 2002, 80:3967. 被引量:1
  • 9Fei Wang, S F Li, Qiang Sun, et al. First-principles study of structural and electronic properties o{ zincblcnde AlxIn1-x N [J]. Solid State Sciences, 2010, 12:1641. 被引量:1
  • 10Furthmuller J, Hahn P H. Band structures and optical spectra of InN polymor phs: Influence of quasiparticle and excitonic effects [J]. Phys. Rev., 2005, B72:205106. 被引量:1

共引文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部