摘要
碳化硅(SiC)作为第三代半导体材料,不仅在化学性能上相对稳定,而且具有一系列突出的物理性能优势,如器件极限工作温度高、临界击穿电场强度大及热导率高等,是目前相对成熟且应用最广的宽禁带材料。为满足SiC在新能源汽车、太阳能光伏及风力发电等领域的大规模应用需求,高质量、大尺寸、低成本的SiC单晶生长工艺仍是未来研究重点。其中,高温溶液生长法(HTSG)获得的SiC单晶具有晶体位错少、易扩径且易实现P型掺杂、成本低等优势,弥补了物理气相传输法(PVT)生长出的晶体缺陷多且高能耗、高成本等不足。在HTSG法生长SiC单晶中,助溶剂的合理选择是提高SiC晶体生长效率与生长质量的关键因素;目前,常用的助溶液体系为Si–Cr二元或Si–Cr–Al三元体系。4H碳化硅(4H–SiC)作为一种典型的SiC晶体结构,存在一个六方格点和一个立方格点,且双原子层以ABCB–ABCB形式连接,这种排列方式使得4H–SiC晶体具有较高硬度及热稳定性。本文首先总结了HTSG法生长4H–SiC单晶中助溶剂的研究历程,然后从热力学角度分析了助溶液体系对晶体生长的影响,并归纳总结了针对助溶剂的研究所采用的不同方法,最后提出了HTSG法生长4H–SiC单晶中助溶剂研究的重点和难点。
Silicon carbide (SiC) as a third-generation semiconductor material with stable chemical properties is currently the most widely used wide-band material.Moreover,SiC has significant advantages such as a high device limit temperature,a high critical breakdown field strength,and a high thermal conductivity.SiC single crystals with high-quality,large-size,low-cost can be used in large-scale SiC applications.The high-temperature solution growth method (HTSG) for growing SiC offers some advantages such as reduced crystal dislocations,ease of operation,feasibility of P-type doping,and low cost.These advantages can compensate for the drawbacks of high energy consumption,poor crystal quality,and high costs associated with the crystal growth process of the physical vapor transport(PVT) method.Nevertheless,the selection of solvents in the HTSG method is a key factor in improving the crystal growth efficiency and growth quality.The existing mainstream systems of the HTSG method are Si–Cr binary system and Si–Cr–Al ternary system.4H–SiC has a hexagonal lattice point and a cubic lattice point,and the diatomic layers are connected in the form of ABCB–ABCB.Therefore,a regular atomic arrangement is needed to avoid the entrapment of other solvent atoms.For a deeper understanding of advances in solvents for the growth of 4H–SiC single crystals by HTSG technique,this review firstly summarized the research history of the solvent,analyzed the influence of the solvent system on the crystal growth from different perspectives of thermodynamics,and gave different methods used for solvent research.Finally,this review represented the crucial points and difficulties in the research of solvents in the growth of 4H–SiC single crystals by high-temperature solution growth method.Summary and prospects Recent research on co solutions for the growth of SiC single crystals by HTSG method through various methods is represented.The research scope of solvents involves thermal physical performance parameters,C dissolution,thermochemical pr
作者
丁祥
钱昊
梁刚强
陈雅薇
刘源
DING Xiang;QIAN Hao;IANG Gangqiang;CHEN Yawei;IU Yuan(Key Laboratory of Metallurgical Emission Reduction&Resources Recycling,Ministry of Education,Anhui University of Technology,Maanshan 243002,Anhui,China;School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China;Key Laboratory for Advanced Materials Processing Technology,Ministry of Education,Beijing 100084,China)
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2024年第7期2425-2441,共17页
Journal of The Chinese Ceramic Society
基金
北京市科技计划项目(Z231100002723001)
安徽省高等学校自然科学研究项目(2023AH051096)。
关键词
碳化硅
高温溶液法
助溶剂
热力学计算
silicon carbide
high temperature solution growth method
solvent
thermodynamic calculations
