摘要
本文设计并制作了fT>400 GHz的In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As铟磷高电子迁移率晶体管(InP HEMT)。采用窄栅槽技术优化了寄生电阻。器件栅长为54.4 nm,栅宽为2×50μm。最大漏极电流IDS.max为957 mA/mm,最大跨导gm.max为1265 mS/mm。即使在相对较小的VDS=0.7 V下,电流增益截止频率fT达到了441 GHz,最大振荡频率fmax达到了299 GHz。该器件可应用于太赫兹单片集成放大器和其他电路中。
In this letter,an In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As InP-based HEMT with fT>400 GHz was designed and fabri⁃cated successfully.A narrow gate recess technology was used to optimize the parasitic resistances.The gate length is 54.4 nm,and the gate width is 2×50μm.The maximum drain current IDS.max is 957 mA/mm,and the maximum transconductance gm.max is 1265 mS/mm.The current gain cutoff frequency fT is as high as 441 GHz and the maximum oscillation frequency fmax reaches 299 GHz,even at a relatively small value of VDS=0.7 V.The re⁃ported device can be applied to terahertz monolithic integrated amplifiers and other circuits.
作者
封瑞泽
曹书睿
冯识谕
周福贵
刘同
苏永波
金智
FENG Rui-Ze;CAO Shu-Rui;FENG Zhi-Yu;ZHOU Fu-Gui;LIU Tong;SU Yong-Bo;JIN Zhi(High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2024年第3期329-333,共5页
Journal of Infrared and Millimeter Waves
基金
The National Natural Science Foundation of China(61434006)。
