摘要
为了进一步提高半导体激光器巴条制造质量,改善解理加工过程中划片损伤情况,采用SPH-FEM转换算法研究划片速度和载荷对单晶砷化镓(gallium arsenide,GaAs)划片损伤的影响。基于广义胡克定律计算出砷化镓{100}晶面<110>晶向的各向异性机械力学特征参数,采用SPHFEM转换算法仿真金刚石刀头划片实验,将划片过程中损伤的有限元转换为粒子,研究损伤粒子在刀头作用下的运动轨迹,确定出划片的损伤过程。研究表明,该方法较好地解决了传统有限元法大变形区域发生网格畸变所导致的计算误差问题,揭示了不同加工参数对砷化镓材料划片损伤的影响,并得到了实验验证,为脆性材料的划片损伤过程提供了新的途径和思路。
In order to further improve the manufacturing quality of semiconductor laser bars and improve the scratching damage during cleavage processing,the SPH-FEM conversion algorithm was used to study the effects of scratching speed and load on the scratching damage of single crystal gallium arsenide(gallium arsenide,GaAs).The anisotropic mechanical characteristic parameters of GaAs{100}crystal plane<110>crystal orientation was calculated based on the generalized Hooke's law.The SPHFEM conversion algorithm was used to simulate the diamond cutting experiment.The finite element damaged in the scratching process was converted into particles,and the motion trajectory of the damaged particles under the action of the cutter head was studied to determine the damage process of the scratching.The results showed that this method can effectively solve the calculation error problem caused by grid distortion in the large deformation area of traditional finite element methods,revealing the influence of different processing parameters on the scratching damage of gallium arsenide materials,and it had been experimentally verified.This provided a new viewpoint and approach for the scratching damage process of brittle materials.
作者
黄鹏辉
姜晨
高睿
蒋金鑫
HUANG Penghui;JIANG Chen;GAO Rui;JIANG Jinxin(School of Mechanical Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China)
出处
《上海理工大学学报》
CAS
CSCD
北大核心
2024年第3期301-309,共9页
Journal of University of Shanghai For Science and Technology
基金
国家自然科学基金资助项目(51475310)。
