摘要
碳化硅光导开关是相关领域的研究热点,但是文献中对4H-SiC光导开关的理论研究仍然以集总元件模型为主,仅能给出定性结果,典型文献中瞬态条件下的实验数据还没有定量的理论解释。文章使用SilvacoTCAD软件中的器件-电路混合模式,结合自编的载流子迁移率接口程序,对4H-SiC光导开关的光学电学特性进行模拟仿真。单脉冲响应的仿真结果表明,器件在瞬态条件下的峰值光电流随光能的变化与文献中的实验数据相符合,表明所用模型和参数具有合理性。对影响单脉冲响应的主要因素,包括脉冲能量、脉冲宽度、碳化硅厚度,进行了计算和分析。同时,针对两种碳化硅厚度的器件,进行了多脉冲串响应的计算和分析。文章得到的结果和结论对碳化硅光导开关的进一步研究具有较好的参考价值。
SiC PCSS is a research hot spot in related fields.However,theoretical research on 4H-SiC PCSS in the literature is still based on lumped element models that can only provide qualitative results.A quantitative explanation of the experimental data under transient conditions in typical literature is still lacking.This study uses the device-circuit hybrid mode in Silvaco TCAD software to simulate the optical and electrical characteristics of the 4H-SiC PCSS combined with a self-written carrier mobility interface program.The simulated results of the single pulse response show that the variation in the peak photocurrent of the device with optical energy is in good agreement with the experimental data under transient conditions reported in the literature,indicating that the model and parameters used are reasonable.The study also calculates and analyzes the main factors that affect the single pulse response,including the pulse energy,pulse width,and silicon carbide thickness.The multi-pulse responses of the devices for the two 4H-SiC thicknesses are calculated and analyzed.The results and conclusions obtained in this study provide a good reference for further research on SiC PCSS.
作者
蓝华英
罗尧天
崔海娟
肖建平
孙久勋
LAN Huaying;LUO Yaotian;CUI Haijuan;XIAO Jianping;SUN Jiuxun(School of Physical Electronics;Sichuan Province Engineering Research Center for Broadband Microwave Circuit High Density Integration,University of Electronic Science and Technology of China,Chengdu 611731,CHN)
出处
《半导体光电》
CAS
北大核心
2024年第2期195-199,共5页
Semiconductor Optoelectronics
基金
四川省宽带微波电路高密度集成工程研究项目(220400).
