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基于SF_(6)/Ar的电感耦合等离子体干法刻蚀β-Ga_(2)O_(3)薄膜

Inductively Coupled Plasma Dry Etching of β-Ga_(2)O_(3) Films Based on SF_(6)/Ar
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摘要 使用SF_(6)/Ar混合气体作为刻蚀气体,采用电感耦合等离子体(ICP)刻蚀方法,研究了不同激励功率和偏置功率对Ga_(2)O_(3)薄膜刻蚀速率的影响以及不同刻蚀时间对表面粗糙度的影响,并观察了光刻胶的损伤情况以调整刻蚀工艺参数。实验结果表明,适度地增大激励功率和偏置功率可以提高刻蚀速率;合适的刻蚀时间可以在得到低粗糙度表面的同时不会过度损伤光刻胶掩膜。通过优化工艺参数,在激励功率为600 W、偏置功率为150 W、刻蚀时间为17 min下,可得到30 nm/min的Ga_(2)O_(3)薄膜刻蚀速率,刻蚀表面的垂直度高、粗糙度低,同时光刻胶掩膜形貌完好。 By using SF_(6)/Ar mixed gas as the etching gas and employing inductively coupled plasma(ICP)etching method,the impacts of different source powers and bias powers on the etching rate of Ga_(2)O_(3) films,as well as the effects of different etching time on surface roughness were investigated.And the damage of photoresist was observed to adjust the etching process parameters.Experimental results demonstrate that the etching rate can be enhanced by moderately increasing the source power and bias power.And appropriate etching time is identified to obtain a low roughness surface without extensive damage to the photoresist mask.By optimizing the process parameters,under the source power of 600 W,the bias power of 150 W and the etching time of 17 min,a Ga_(2)O_(3) film etching rate of 30 nm/min and a highly vertical etched surface with low roughness are achieved,and the photoresist mask morphology is well-preserved.
作者 曾祥余 马奎 杨发顺 Zeng Xiangyu;Ma Kui;Yang Fashun(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province,Guiyang 550025,China;Semiconductor Power Device Reliability Engineering Research Center of Ministry of Education,Guiyang 550025,China)
出处 《半导体技术》 CAS 北大核心 2024年第7期624-628,共5页 Semiconductor Technology
基金 半导体功率器件可靠性教育部工程研究中心开放基金(ERCME-KFJJ2019-(01))。
关键词 电感耦合等离子体(ICP)刻蚀 Ga_(2)O_(3)薄膜 刻蚀速率 光刻胶掩膜 低粗糙度表面 inductively coupled plasma(ICP)etching Ga_(2)O_(3)film etchingrate photoresist mask low roughness surface
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