摘要
本文通过第一性原理计算和实验表征证明了二维CoH_(2)SeO_(4)薄膜的磁有序和滑移铁电性.首先,实验结果证实了粉末CoH_(2)SeO_(4)样品的反铁磁序.同时,第一性原理计算表明单层CoH_(2)SeO_(4)具有反铁磁(AFM-I)基态(TN≈75 K),且预测了二维CoH_(2)SeO_(4)薄膜具有以不对称的三重势阱态为特征的滑移铁电性,并在实验中测得了180°压电滞回线、可反转铁电畴和二次谐波信号.此外,在基于二维CoH_(2)SeO_(4)薄膜的电容器中获得铁电材料所特有的电滞回线和蝴蝶状的电容曲线.介电温谱测试表明二维CoH_(2)SeO_(4)薄膜的铁电转变温度约为370 K.CoH_(2)SeO_(4)中滑移铁电性和反铁磁性的出现为获得低维多铁材料指出了一条新的途径.
Here,we demonstrate the existence of magnetic ordering and sliding ferroelectricity in two-dimensional CoH_(2)SeO_(4)multilayers.The experimental result reveals the antiferromagnetic order in powder sample,and first-principles calculation indicates the antiferromagnetic ground state with TN≈75 K in CoH_(2)SeO_(4)single layer.The sliding ferroelectricity with an asymmetric triplet potential well is theoretically predicted and experimentally confirmed by 180°-piezoelectric hysteresis loops,switchable domains and second harmonic generation signals in CoH_(2)SeO_(4)multilayers.The vertically stacked ferroelectric capacitor shows both polarization and capacitance hysteresis loops.A ferroelectric transition temperature of~370 K is obtained from the temperature-dependent dielectricity.The emergence of sliding ferroelectricity and anti-ferromagnetism points out a new route for obtaining low-dimensional multiferroic materials.
作者
陈璐秋
余冰
沈阳
刘逸飞
王号南
冯光迪
朱秋香
罗卫东
刘俊明
万建国
赵庆彪
田博博
褚君浩
段纯刚
Luqiu Chen;Bing Yu;Yang Shen;Yifei Liu;Haonan Wang;Guangdi Feng;Qiuxiang Zhu;Weidong Luo;Junming Liu;Jianguo Wan;Qingbiao Zhao;Bobo Tian;Junhao Chu;Chungang Duan(Key Laboratory of Polar Materials and Devices(MOE),Shanghai Center of Brain-inspired Intelligent Materials and Devices,and Department of Electronics,East China Normal University,Shanghai,200241,China;Zhejiang Lab,Hangzhou,310000,China;Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing,210093,China;Key Laboratory of Artificial Structures and Quantum Control,School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai,200240,China;School of Chemistry and Environmental Engineering,Wuhan Institute of Technology,Wuhan,430205,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai,200083,China;Institute of Optoelectronics,Fudan University,Shanghai,200433,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan,030006,China)
基金
supported by National Key Research and Development Program of China(2021YFA1200700)
The National Natural Science Foundation of China(No.52372120,T2222025 and 62174053)
Shanghai Science and Technology Innovation Action Plan(21JC1402000 and 21520714100)
the Fundamental Research Funds for the Central Universities。
