摘要
二氧化硅(SiO_(2))薄膜因出色的光学、介电、抗刻蚀和优异力学性能等特点,在光学和微电子等多个领域中有着广泛的应用。制备SiO_(2)薄膜的工艺方法及工艺条件都会影响其性能,但目前对其系统性研究仍有欠缺。本工作探讨了磁控溅射和热氧化两种制备方法,以及各种工艺条件对SiO_(2)薄膜性能的影响。首先,研究了磁控溅射过程中溅射功率对沉积速率和膜层粗糙度的影响。结果表明随着溅射功率的增加,沉积速率和膜层粗糙度均增大。其次,创新地利用马弗炉在空气氛围下进行热氧化,并与标准氧化炉的干氧和湿氧氧化进行了比较。结果表明:氧化温度要大于800℃;在900~1100℃氧化速率线性增加;在1200℃时速率增加变缓,由于空气中氧气供应略不足。基于低价位的马弗炉设备成功制备出高质量的SiO_(2)薄膜。随后,对磁控溅射与不同氛围下热氧化制得的SiO_(2)薄膜进行了折射率和抗刻蚀性的表征与对比分析。结果表明热氧化制备的SiO_(2)薄膜具有更高的折射率和更好的抗刻蚀特性。本研究不仅丰富了SiO_(2)薄膜制备的理论基础,还为不同制备方法和不同工艺条件下制得的SiO_(2)薄膜的性能提供了参考,具有较好的理论价值和实践意义。
Silicon dioxide(SiO_(2))thin films are widely used in various fields such as optical devices and microelectronic devices due to their excellent optical,dielectric,etching resistance,and mechanical properties.The preparation process and its conditions can affect the performance of SiO_(2) thin films,but there is still a lack of systematic research on this topic.This article delves into two preparation methods,magnetron sputtering and thermal oxidation,as well as the effects of various process conditions on the properties of SiO_(2) thin films.Firstly,the influence of sputtering power on deposition rate and film roughness during magnetron sputtering was studied.The results indicate that as the sputtering power increases,both the deposition rate and the roughness of the film layer increase.Secondly,we innovatively utilized a muffle furnace for thermal oxidation in an air atmosphere and compared it with the dry oxygen and wet oxygen oxidation of a standard oxidation furnace.The experimental results show that the oxidation temperature should be greater than 800℃.The oxidation rate increases linearly at 900—1100℃,and slows down at 1200℃when the oxygen supply in the air is slightly insufficient.High quality SiO_(2) thin films have been successfully prepared based on inexpensive muffle furnace equipment.Subsequently,we characterized and compared the refractive index and etching resistance of SiO_(2) films prepared by magnetron sputtering and thermal oxidation under different atmospheres.The results show that SiO_(2) thin films prepared by thermal oxidation have higher refractive index and better resistance to etching.This study not only enriches the theoretical foundation of SiO_(2) film preparation,but also provides reference for the performance of SiO_(2) films prepared under different preparation methods and process conditions,which has good theoretical value and practical significance.
作者
何亮
王祥宇
田浩生
杨海林
乐景胜
杨帆
梁佳伟
刘利芹
HE Liang;WANG Xiangyu;TIAN Haosheng;YANG Hailin;LE Jingsheng;YANG Fan;LIANG Jiawei;LIU Liqin(College of Optoelectronics Engineering,Chengdu University of Information Technology,Chengdu 610225,China)
出处
《材料导报》
EI
CAS
CSCD
北大核心
2024年第S01期38-41,共4页
Materials Reports
基金
国家自然科学基金(62005029)
四川省科技计划项目(2021YFG0010,2023YFG0084)
成都信息工程大学引进人才科研启动项目(KYTZ202175)。
关键词
SiO_(2)薄膜
磁控溅射
热氧化
折射率
抗刻蚀特性
SiO_(2)thin film
magnetron sputtering
thermal oxidation
refractive index
etching resistance
