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Correction:Efficiency improvement by using metal–insulator‑semiconductor structure in InGaN/GaN micro‑light‑emitting diodes

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摘要 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License,which permits use,sharing,adaptation,distribution and reproduction in any medium or format,as long as you give appropriate credit to the original author(s)and the source,provide a link to the Creative Commons licence,and indicate if changes were made.The images or other third party material in this article are included in the article’s Creative Commons licence.
出处 《Frontiers of Optoelectronics》 EI CSCD 2024年第1期95-99,共5页 光电子前沿(英文版)
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